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论文成果
- 41Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs.IEEE Electron Device Letters,2020,
- 42Ionic doping of TiO2 thin film transistors using superacid treatment.Electronic Materials Conference,2020,
- 43Enhanced electrical performance of forming gas annealed InAlN/GaN HEMTs on silicon with fT/fmax of 165/165 GHz.IEEE Device Research Conference,2020,
- 44Determination of band alignments at 2D tungsten disulfide/high-k dielectric oxides interfaces by x-ray photoelectron spectroscopy.Applied Surface Science,2020,
- 45InAlN/GaN MISHEMT with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric.Japanese Journal of Applied Physics,2020,
- 46Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis(trifluoromethane) sulfonamide treatment.. Phys. D: Appl. Phys.,2020,
- 47Enhancement/Depletion Mode TiO2 Thin Film Transistors via O2/N2 Pre-annealing.IEEE Transactions on Electron Device,2020,
- 48Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate.Semiconductor Science and Technology,2020,
- 49Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing.IEEE Electron Device Letters,2019,
