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论文成果
- 31Atomically-thin atomic-layer-deposited InZnO transistors with BEOL compatibility.IEEE Device Research Conference,2022,
- 32BEOL-Compatible Atomic-Layer-Deposited In-rich InGaO TFTs with High Positive-Gate-Bias-Stress Stability.IEEE Semiconductor Interface Specialists Conference,2022,
- 33First Demonstration of BEOL-Compatible Ultrathin Atomic-Layer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability.IEEE International Electron Devices Meeting,2022,
- 34Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions.Frontiers of Physics,2022,
- 35Improved On/Off current ratio of TiO2/AlGaN/GaN MIS-HEMTs with N2O surface treatment on TiO2 layer.IEEE Device Research Conference,2022,
- 36Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor.IEEE Device Research Conference,2021,
- 37One-volt TiO2 Thin Film Transistors with Low-Temperature Process.IEEE Electron Device Letters,2021,
- 38High-performance Sub-2 Volts TiO2 thin film transistors enabled by ultrathin ZrO2 gate dielectrics.IEEE Electron Device Technology and Manufacturing Conference,2021,
- 39Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation.Science China Materials,2021,
- 40Impact of ZrO2 dielectrics thickness on electrical performance of TiO2 thin film transistors with sub-2 V operation.ACS Applied Electronic Materials,2021,
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Low Turn-on Voltage and Reverse Leakage Current β-Ga2O3 MIS Schottky Barrier Diode with an AlN Interfacial Layer.IEEE Transactions on Electron Devices,2024,
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Trench Beside Field Limiting Rings Terminal for Improved 4H-SiC Junction Barrier Schottky Diodes: Proposal and Investigation.Microelectronics Reliability,2024,
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High-performance 8×8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging, IEEE Photonics Technology Letters.IEEE Photonics Technology Letters,2024,(36):239-242.
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High Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron Sputtered CuCrO2/β-Ga2O3 p-n Heterojunction.IEEE Transactions on Electron Devices,2024,
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Simultaneous Electric Dipoles and Flat-band Voltage Modulation in 4H-SiC MOS Capacitors through HfO2/SiO2 Interface Engineering.Journal of Physics D: Applied Physics,2024,
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Lowering Schottky Barrier Height by Quasi-van Der Waals Contacts for High-performance P-type MoTe2 Field-Effect Transistors.ACS Applied Materials & Interfaces,2024,
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High-Performance β-Ga2O3 MISIM Solar-Blind Photodetectors with An Interfacial AlN Layer.IEEE Photonics Technology Letters,2024,(36):593-596.
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Effect of Oxygen Precursors on Growth Mechanism in High-quality β-Ga2O3 Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-blind Photodetectors.IEEE Sensor Journal,2024,
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Synergistically Modulating Conductive Filaments in Ion-Based Memristors for Enhanced Analog In-Memory Computing.Advanced Science,2024,
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Self-aligned ionic doping of TiO2 thin film transistors for enhanced current drivability via post-fabrication superacid treatment,.ACS Applied Materials & Interfaces,2024,
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