Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate
- 影响因子:
- 2.048
- 发表刊物:
- Semiconductor Science and Technology
- 备注:
- G Lin, D Liang, Z Huang, C Yu, P Cui, J Zhang, J Wang, J Xu, S Chen, C Li, Y Zeng
- 是否译文:
- 否
- 发表时间:
- 2020-01-01