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Atomically-thin atomic-layer-deposited InZnO transistors with BEOL compatibility.IEEE Device Research Conference,2022,
BEOL-Compatible Atomic-Layer-Deposited In-rich InGaO TFTs with High Positive-Gate-Bias-Stress Stability.IEEE Semiconductor Interface Specialists Conference,2022,
First Demonstration of BEOL-Compatible Ultrathin Atomic-Layer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability.IEEE International Electron Devices Meeting,2022,
Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions.Frontiers of Physics,2022,
Improved On/Off current ratio of TiO2/AlGaN/GaN MIS-HEMTs with N2O surface treatment on TiO2 layer.IEEE Device Research Conference,2022,
Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor.IEEE Device Research Conference,2021,
One-volt TiO2 Thin Film Transistors with Low-Temperature Process.IEEE Electron Device Letters,2021,
High-performance Sub-2 Volts TiO2 thin film transistors enabled by ultrathin ZrO2 gate dielectrics.IEEE Electron Device Technology and Manufacturing Conference,2021,
Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation.Science China Materials,2021,
Impact of ZrO2 dielectrics thickness on electrical performance of TiO2 thin film transistors with sub-2 V operation.ACS Applied Electronic Materials,2021,

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