Power Semconductor Laboratory
中文 MOBILE Version

Impact of ZrO2 dielectrics thickness on electrical performance of TiO2 thin film transistors with sub-2 V operation

  • Impact Factor:4.494
  • Journal:ACS Applied Electronic Materials
  • Note:J Zhang, M Jia, M Sales, Y Zhao, G Lin, P Cui, C Santiwipharat, C Ni, S McDonnell, Y Zeng
  • Translation or Not:no
  • Date of Publication:2021-01-01
Pre One:Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation

Next One:Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs

ZipCode：

PostalAddress：

Email：

  • The public

  • mobile browsing

Click: Open time:..   The Last Update Time:..

©2023 Power Semiconductor Laboratory, School of Electronic Science and Technology, Xiamen University. All rights reserved