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First Demonstration of BEOL-Compatible Ultrathin Atomic-Layer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability

Journal: IEEE International Electron Devices Meeting
Note: D Zheng, A Charnas, J Anderson, H Dou, Z Hu, Z Lin, Z Zhang, J Zhang, P. Y. Liao, M Si, H. Wang, D Weinstein and P. D. Ye
Translation or Not: no
Date of Publication: 2022-01-01

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