Power Semconductor Laboratory
中文 MOBILE Version

Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation

  • Impact Factor:8.642
  • Journal:Science China Materials
  • Note:Baoshan Tang,Yunshan Zhao,Changjie Zhou,Mingkun Zhang,Huili Zhu,Yida Li,Jin Feng Leong,Hao Shuai,Hao Gong and Weifeng Yang
  • Translation or Not:no
  • Date of Publication:2021-01-01
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