Power Semconductor Laboratory

BEOL-Compatible Atomic-Layer-Deposited In-rich InGaO TFTs with High Positive-Gate-Bias-Stress Stability

  • Journal:IEEE Semiconductor Interface Specialists Conference
  • Note:J Zhang, Z Zhang, D Zheng, A Charnas, Z Lin, and P. D. Ye
  • Translation or Not:no
  • Date of Publication:2022-01-01