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Paper Publications
Improved On/Off current ratio of TiO2/AlGaN/GaN MIS-HEMTs with N2O surface treatment on TiO2 layer
Journal:
IEEE Device Research Conference
Note:
T Zhama, P Cui, J Zhang, H Zhao, A Sharma and Y Zeng
Translation or Not:
no
Date of Publication:
2022-01-01
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Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions
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Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor