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Improved On/Off current ratio of TiO2/AlGaN/GaN MIS-HEMTs with N2O surface treatment on TiO2 layer

  • Journal:IEEE Device Research Conference
  • Note:T Zhama, P Cui, J Zhang, H Zhao, A Sharma and Y Zeng
  • Translation or Not:no
  • Date of Publication:2022-01-01
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