厦门大学平台管理系统 Power Semconductor Laboratory--Home--Paper Publications

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Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs.IEEE Electron Device Letters,2020,
Ionic doping of TiO2 thin film transistors using superacid treatment.Electronic Materials Conference,2020,
Enhanced electrical performance of forming gas annealed InAlN/GaN HEMTs on silicon with fT/fmax of 165/165 GHz.IEEE Device Research Conference,2020,
Determination of band alignments at 2D tungsten disulfide/high-k dielectric oxides interfaces by x-ray photoelectron spectroscopy.Applied Surface Science,2020,
InAlN/GaN MISHEMT with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric.Japanese Journal of Applied Physics,2020,
Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis(trifluoromethane) sulfonamide treatment.. Phys. D: Appl. Phys.,2020,
Enhancement/Depletion Mode TiO2 Thin Film Transistors via O2/N2 Pre-annealing.IEEE Transactions on Electron Device,2020,
Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate.Semiconductor Science and Technology,2020,
Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing.IEEE Electron Device Letters,2019,

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