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Low Turn-on Voltage and Reverse Leakage Current β-Ga2O3 MIS Schottky Barrier Diode with an AlN Interfacial L....IEEE Transactions on Electron Devices,2024,
Trench Beside Field Limiting Rings Terminal for Improved 4H-SiC Junction Barrier Schottky Diodes: Proposal an....Microelectronics Reliability,2024,
High-performance 8×8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging, IEEE Photonics Technology Letter....IEEE Photonics Technology Letters,2024,(36):239-242.
High Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron Sputtered CuCrO2/β-Ga2O3 p-n He....IEEE Transactions on Electron Devices,2024,
Simultaneous Electric Dipoles and Flat-band Voltage Modulation in 4H-SiC MOS Capacitors through HfO2/SiO2 Int....Journal of Physics D: Applied Physics,2024,
Lowering Schottky Barrier Height by Quasi-van Der Waals Contacts for High-performance P-type MoTe2 Field-Effe....ACS Applied Materials & Interfaces,2024,

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