厦门大学平台管理系统 Power Semconductor Laboratory--Home--Paper Publications

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Low Turn-on Voltage and Reverse Leakage Current β-Ga2O3 MIS Schottky Barrier Diode with an AlN Interfacial Layer.IEEE Transactions on Electron Devices,2024,
Trench Beside Field Limiting Rings Terminal for Improved 4H-SiC Junction Barrier Schottky Diodes: Proposal and Investigation.Microelectronics Reliability,2024,
High-performance 8×8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging, IEEE Photonics Technology Letters.IEEE Photonics Technology Letters,2024,(36):239-242.
High Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron Sputtered CuCrO2/β-Ga2O3 p-n Heterojunction.IEEE Transactions on Electron Devices,2024,
Simultaneous Electric Dipoles and Flat-band Voltage Modulation in 4H-SiC MOS Capacitors through HfO2/SiO2 Interface Engineering.Journal of Physics D: Applied Physics,2024,
Lowering Schottky Barrier Height by Quasi-van Der Waals Contacts for High-performance P-type MoTe2 Field-Effect Transistors.ACS Applied Materials & Interfaces,2024,
High-Performance β-Ga2O3 MISIM Solar-Blind Photodetectors with An Interfacial AlN Layer.IEEE Photonics Technology Letters,2024,(36):593-596.
Effect of Oxygen Precursors on Growth Mechanism in High-quality β-Ga2O3 Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-blind Photodetectors.IEEE Sensor Journal,2024,
Synergistically Modulating Conductive Filaments in Ion-Based Memristors for Enhanced Analog In-Memory Computing.Advanced Science,2024,
Self-aligned ionic doping of TiO2 thin film transistors for enhanced current drivability via post-fabrication superacid treatment,.ACS Applied Materials & Interfaces,2024,

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