厦门大学平台管理系统 Power Semconductor Laboratory--Home-- Atomically-thin atomic-layer-deposited InZnO transistors with BEOL compatibility

General link 中文 MOBILE Version

Power Semconductor Laboratory

Home > Achievements in Scientific Research > Paper Publications

Atomically-thin atomic-layer-deposited InZnO transistors with BEOL compatibility

Journal: IEEE Device Research Conference
Note: D Zheng, J Zhang, A Charnas, Z Zhang, X Lyu, P Liao, Z Lin and P. D. Ye
Translation or Not: no
Date of Publication: 2022-01-01

Pre One:Fluorine-passivated In2O3 Thin Film Transistors with Improved Electrical Performance via Low-Temperature CF4/N2O Plasma

Next One:BEOL-Compatible Atomic-Layer-Deposited In-rich InGaO TFTs with High Positive-Gate-Bias-Stress Stability

ZipCode:
PostalAddress:
Email:

©2023 Power Semiconductor Laboratory, School of Electronic Science and Technology, Xiamen University. All rights reserved