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论文成果
- 21*.Nano Energy,2019,(56):269-276.
- 22*.Energy Storage Materials,2019,(23):1-7.
- 23*.Science China Materials,2022,(65):741-747.
- 24Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure.IEEE Device Research Conference,2022,
- 25Effect of gallium incorporation on electrical and material characteristics of TiO2 films for high-permittivity dielectric application.Compound Semiconductor Week,2022,
- 26Low-Temperature CF4/N2O Plasma Treated In2O3 Thin Film Transistors with Excellent Bias Stability.IEEE Semiconductor Interface Specialists Conference,2022,
- 27Highly Gate-Bias-Stress Stable Atomic-Layer-Deposited InZnO TFTs with BEOL-Compatibility.IEEE Semiconductor Interface Specialists Conference,2022,
- 28High-performance TiO2 thin film transistors using TiO2 as both channel and dielectric.IEEE Device Research Conference,2022,
- 29Interfacial properties of 2D WS2 on SiO2 substrate from x-ray photoelectron spectroscopy and first-principles calculations.Frontiers of Physics,2022,
- 30Fluorine-passivated In2O3 Thin Film Transistors with Improved Electrical Performance via Low-Temperature CF4/N2O Plasma.Applied Physics Letters,2022,
