First Demonstration of BEOL-Compatible Ultrathin Atomic-Layer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability
发布时间：2023-04-04
点击次数：
- 发表刊物：
- IEEE International Electron Devices Meeting
- 备注：
- D Zheng, A Charnas, J Anderson, H Dou, Z Hu, Z Lin, Z Zhang, J Zhang, P. Y. Liao, M Si, H. Wang, D Weinstein and P. D. Ye
- 是否译文：
- 否
- 发表时间：
- 2022-01-01
