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InAlN/GaN MISHEMT with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric

  • Impact Factor:1.491
  • Journal:Japanese Journal of Applied Physics
  • Note:P Cui, J Zhang, M Jia, G Lin, L Wei, H Zhao, L Gundlach, Y Zeng
  • Translation or Not:no
  • Date of Publication:2020-01-01
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