Power Semconductor Laboratory
中文 MOBILE Version

Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate

  • Impact Factor:2.048
  • Journal:Semiconductor Science and Technology
  • Note:G Lin, D Liang, Z Huang, C Yu, P Cui, J Zhang, J Wang, J Xu, S Chen, C Li, Y Zeng
  • Translation or Not:no
  • Date of Publication:2020-01-01
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