Power Semconductor Laboratory
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Enhanced electrical performance of forming gas annealed InAlN/GaN HEMTs on silicon with fT/fmax of 165/165 GHz

  • Journal:IEEE Device Research Conference
  • Note:P Cui, M Jia, G Lin, J Zhang, L Gundlach, Y Zeng
  • Translation or Not:no
  • Date of Publication:2020-01-01
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