Power Semconductor Laboratory
中文 MOBILE Version

Simultaneous Electric Dipoles and Flat-band Voltage Modulation in 4H-SiC MOS Capacitors through HfO2/SiO2 Interface Engineering

  • Journal:Journal of Physics D: Applied Physics
  • Note:Xinwei Wang, Weifeng Yang* et al.
  • Translation or Not:no
  • Date of Publication:2024-01-01
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