Power Semconductor Laboratory
中文 MOBILE Version

Effect of Oxygen Precursors on Growth Mechanism in High-quality β-Ga2O3 Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-blind Photodetectors

  • DOI number:10.1109/2024.3373252
  • Journal:IEEE Sensor Journal
  • Note:Chengyi Tian, Weifeng Yang* et al
  • Translation or Not:no
  • Date of Publication:2024-01-01
Pre One:High-Performance β-Ga2O3 MISIM Solar-Blind Photodetectors with An Interfacial AlN Layer

Next One:Synergistically Modulating Conductive Filaments in Ion-Based Memristors for Enhanced Analog In-Memory Computing

ZipCode：

PostalAddress：

Email：

  • The public

  • mobile browsing

Click: Open time:..   The Last Update Time:..

©2023 Power Semiconductor Laboratory, School of Electronic Science and Technology, Xiamen University. All rights reserved