Power Semconductor Laboratory
中文 MOBILE Version

Lowering Schottky Barrier Height by Quasi-van Der Waals Contacts for High-performance P-type MoTe2 Field-Effect Transistors

  • Journal:ACS Applied Materials & Interfaces
  • Note:Ze Yang, Weifeng Yang* et al.
  • Translation or Not:no
  • Date of Publication:2024-01-01
Pre One:Simultaneous Electric Dipoles and Flat-band Voltage Modulation in 4H-SiC MOS Capacitors through HfO2/SiO2 Interface Engineering

Next One:High-Performance β-Ga2O3 MISIM Solar-Blind Photodetectors with An Interfacial AlN Layer

ZipCode：

PostalAddress：

Email：

  • The public

  • mobile browsing

Click: Open time:..   The Last Update Time:..

©2023 Power Semiconductor Laboratory, School of Electronic Science and Technology, Xiamen University. All rights reserved