Power Semconductor Laboratory
中文 MOBILE Version

Fluorine-passivated In2O3 Thin Film Transistors with Improved Electrical Performance via Low-Temperature CF4/N2O Plasma

  • Impact Factor:3.816
  • Journal:Applied Physics Letters
  • Note:J Zhang, A Charnas, Z Lin, D Zheng, Z Zhang, P Liao, D Zemlyanov, and P. D. Ye
  • Translation or Not:no
  • Date of Publication:2022-01-01
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