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Fluorine-passivated In2O3 Thin Film Transistors with Improved Electrical Performance via Low-Temperature CF4/N2O Plasma

Impact Factor: 3.816
Journal: Applied Physics Letters
Note: J Zhang, A Charnas, Z Lin, D Zheng, Z Zhang, P Liao, D Zemlyanov, and P. D. Ye
Translation or Not: no
Date of Publication: 2022-01-01

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