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Paper Publications
*
Journal:
Applied Physics Letters
Note:
JCR二区,TOP期刊,IF: 3.9
Issue:
112
Page Number:
171604
Translation or Not:
no
Date of Publication:
2018-01-01
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Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents
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