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Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents

  • Journal:IEEE International Electron Devices Meeting
  • Note:Z Zhang, Z Lin, A Charnas, H Dou, Z Shang, J Zhang, M Si, H Wang, M. A. Alam and P. D. Ye
  • Translation or Not:no
  • Date of Publication:2022-01-01
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