厦门大学平台管理系统 Power Semconductor Laboratory--Home-- Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents

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Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents

Journal: IEEE International Electron Devices Meeting
Note: Z Zhang, Z Lin, A Charnas, H Dou, Z Shang, J Zhang, M Si, H Wang, M. A. Alam and P. D. Ye
Translation or Not: no
Date of Publication: 2022-01-01

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