Power Semconductor Laboratory
中文 MOBILE Version

Highly Gate-Bias-Stress Stable Atomic-Layer-Deposited InZnO TFTs with BEOL-Compatibility

  • Journal:IEEE Semiconductor Interface Specialists Conference
  • Note:.D Zheng, A Charnas, H Dou, Z Hu, J Zhang, H Wang, and P. D. Ye
  • Translation or Not:no
  • Date of Publication:2022-01-01
Pre One:Low-Temperature CF4/N2O Plasma Treated In2O3 Thin Film Transistors with Excellent Bias Stability

Next One:High-performance TiO2 thin film transistors using TiO2 as both channel and dielectric

ZipCode：

PostalAddress：

Email：

  • The public

  • mobile browsing

Click: Open time:..   The Last Update Time:..

©2023 Power Semiconductor Laboratory, School of Electronic Science and Technology, Xiamen University. All rights reserved