General link 中文 MOBILE Version

Home > Achievements in Scientific Research > Paper Publications

Highly Gate-Bias-Stress Stable Atomic-Layer-Deposited InZnO TFTs with BEOL-Compatibility

Pre One:Low-Temperature CF4/N2O Plasma Treated In2O3 Thin Film Transistors with Excellent Bias Stability

Next One:High-performance TiO2 thin film transistors using TiO2 as both channel and dielectric

©2023 Power Semiconductor Laboratory, School of Electronic Science and Technology, Xiamen University. All rights reserved