Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents
发布时间：2023-04-04
点击次数：
- 发表刊物：
- IEEE International Electron Devices Meeting
- 备注：
- Z Zhang, Z Lin, A Charnas, H Dou, Z Shang, J Zhang, M Si, H Wang, M. A. Alam and P. D. Ye
- 是否译文：
- 否
- 发表时间：
- 2022-01-01
