Power Semconductor Laboratory
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一种含稀土栅介质层的超结 SiC MOSFET 及其制造方法

  • Patent description:杨伟锋,王鑫炜,冶晓峰,龙明涛
  • Application Number:202310089969.X
  • Number of Inventors:4
  • Service Invention or Not:no
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