Power Semconductor Laboratory
中文 MOBILE Version

Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure

  • Journal:IEEE Device Research Conference
  • Note:A Charnas, J Anderson, J Zhang, D Zheng, D Weinstein and P. D. Ye
  • Translation or Not:no
  • Date of Publication:2022-01-01
Pre One:*

Next One:Effect of gallium incorporation on electrical and material characteristics of TiO2 films for high-permittivity dielectric application

ZipCode：

PostalAddress：

Email：

  • The public

  • mobile browsing

Click: Open time:..   The Last Update Time:..

©2023 Power Semiconductor Laboratory, School of Electronic Science and Technology, Xiamen University. All rights reserved