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Paper Publications
Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition
Impact Factor:
4.615
Journal:
IEEE Electron Device Letters
Note:
J Zhang, D Zheng, Z Zhang, A Charnas, Z Lin and P. D. Ye
Translation or Not:
no
Date of Publication:
2023-01-01
Pre One:
Self-aligned ionic doping of TiO2 thin film transistors for enhanced current drivability via post-fabrication superacid treatment,
Next One:
Ultra-thin atomic-layer-deposited InGaZnO thin film transistors with Back-End-of-Line Compatibility