This research direction focuses on the controlled synthesis of two-dimensional ultrawide-bandgap materials, particularly hexagonal boron nitride (hBN), and their applications in deep-ultraviolet optoelectronics.

Two-dimensional ultrawide-bandgap materials combine atomic-scale thickness, large bandgaps, clean interfaces, and intrinsic spectral selectivity in the deep-ultraviolet region, providing a unique materials platform for solar-blind ultraviolet photodetectors with low dark current, high signal-to-noise ratio, and high integration density.

Starting from high-quality materials synthesis and defect/interface engineering, we systematically investigate carrier generation, transport, recombination, and metal–semiconductor contact mechanisms under deep-UV excitation. We further develop single-pixel detectors, two-dimensional device arrays, and on-chip imaging systems, establishing an integrated research pathway from materials to devices, arrays, and imaging.

Research Topics:

· Wafer-scale multilayer hBN and other 2D ultrawide-bandgap materials

· Control of layer number, defects, interfaces, and band structures

· Deep-UV photodetectors with low dark current and high responsivity

· Deep-UV pixel arrays and wafer-scale device fabrication

· Solar-blind deep-UV imaging and on-chip optoelectronic integration