This research direction addresses the scientific and technological challenges of bringing two-dimensional materials from atomic-scale controlled growth to wafer-scale manufacturing and chip integration for emerging semiconductor technologies beyond conventional scaling.

We investigate graphene, hexagonal boron nitride (hBN), transition-metal dichalcogenides (TMDs), and other emerging two-dimensional materials, with a particular focus on nucleation, epitaxy, growth kinetics, interfacial interactions, and crystallographic orientation control.

Building on this fundamental understanding, we develop wafer-scale single-crystal growth, precise control of layer number and stacking, low-temperature direct synthesis, and transfer-free integration. Our goal is to establish compatible pathways between two-dimensional materials and silicon semiconductor technologies, enabling the transition from microscopic research samples to large-area, reproducible, and manufacturable wafer-scale materials and devices.

Research Topics:

· Growth mechanisms and crystallographic control of CVD/MOCVD-grown 2D materials

· Wafer-scale single-crystal graphene, hBN, and TMDs

· Precise control of layer number, stacking, defects, and interfaces

· Low-temperature, transfer-free growth and BEOL-compatible integration

· Heterogeneous integration of 2D materials with silicon platforms and wafer-scale device fabrication